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Amos R Eppley

from Sunnyvale, CA
Age ~64
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Also known as:
Amos Eppley, Amos Russell Eppley, Amos Russew Eppley
1085 Tasman Dr, Sunnyvale, CA 94089
Related to:
Linda C Gressley, 66Pamela L Reed, 56Dorothy A Eppley, 83Frank J Eppley, 30
Connected to:
Heather A Eppley, 37Jessie Eppley, 53John Eppley, 86Katrina M Eppley, 32Tara M Eppley, 40Diane E Eppolito, 77Donald S Eppolito, 58Valerie M Eppolito, 41Kimberly A Epprecht, 55Sandra E Epprecht, 60

Amos Eppley Phones & Addresses

  • 1085 Tasman Dr, Sunnyvale, CA 94089
  • Johnstown, PA
  • Arvada, CO

Publications

Us Patents

Enhancement Of Grain Structure For Contacts

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US Patent:
7268001, Sep 11, 2007
Filed:
Feb 13, 2007
Appl. No.:
11/674565
Inventors:
Amos Eppley - Sunnyvale CA,
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01L 21/66
US Classification:
438 14, 438 15, 438685
Abstract:
A method for cross sectioning a feature of a semiconductor device while preserving the grain structure of a contact material is provided. The method initiates with exposing the contact material of a contact at a first depth within the semiconductor device. Then, the exposed contact material at the first depth is coated. The coated material is then removed, thereby exposing the contact material at a second depth within the semiconductor device. Then, the exposed material at the second depth is coated.

Enhancement Of Grain Structure For Tungsten Contracts

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US Patent:
7195932, Mar 27, 2007
Filed:
Aug 9, 2004
Appl. No.:
10/915646
Inventors:
Amos Eppley - Sunnyvale CA,
Assignee:
Altera Corporation - San Jose CA
International Classification:
H01L 21/66
US Classification:
438 14, 438 15, 438685
Abstract:
A method for enhancing grain structure of a contact material for a semiconductor device is provided. The method initiates with exposing the contact material of a contact at a first depth within the semiconductor device. Then, the exposed contact material at the first depth is coated. In one embodiment, the exposed contact material is coated via a voltage potential driven energy. The coated material is then removed, thereby exposing the contact material at a second depth within the semiconductor device. Then, the exposed material at the second depth is coated.
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Amos R Eppley from Sunnyvale, CA, age ~64 Get Report