John P Daugherty

6344105, Feb 5, 2002

Jun 30, 1999

09/345639

John E. Daugherty - Oakland CA
Neil Benjamin - Palo Alto CA
Jeff Bogart - Los Gatos CA
Vahid Vahedi - Albany CA
David Cooperberg - Fremont CA
Alan Miller - Moraga CA
Yoko Yamaguchi - Yokohama, JP

Lam Research Corporation - Fremont CA

H01L 2100

156345

Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

6533910, Mar 18, 2003

Dec 29, 2000

09/750251

Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA

Lam Research Corporation - Fremont CA

C23C 1434

20429831, 156345, 20429801

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a carbonitride containing surface and process for manufacture thereof.

6537429, Mar 25, 2003

Dec 29, 2000

09/749925

Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA

Lam Research Corporation - Fremont CA

C23C 1400

204193, 2041921, 20419211, 20419215, 20419225, 20419637, 20429801, 427577, 428332, 428408, 428698, 428704

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

6613442, Sep 2, 2003

Dec 29, 2000

09/749924

Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA

Lam Research Corporation - Fremont CA

B23B 1504

428469, 428704, 428697

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

6620520, Sep 16, 2003

Dec 29, 2000

09/750056

Robert J. ODonnell - Alameda CA
Christopher C. Chang - Sunnyvale CA
John E. Daugherty - Alameda CA

Lam Research Corporation - Fremont CA

B32B 1504

428469, 438 9, 118715

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al O ). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

6770214, Aug 3, 2004

Mar 30, 2001

09/820691

Duane Outka - Fremont CA
Yousun Kim - Santa Clara CA
Anthony Chen - Oakland CA
John Daugherty - Fremont CA

Lam Research Corporation - Fremont CA

C25F 304

216 67, 216 77, 134 11, 134 221

A method of reducing aluminum fluoride deposits in a plasma etch reactor. The deposits can be reduced during a cleaning step wherein the cleaning gas includes BCl energized into a plasma such that dissociated and undissociated BCl are formed and the undissociated BCl reacts with aluminum fluoride deposits and forms volatile products which are removed from the chamber. The introduction of Cl into the cleaning gas allows control of the degree of BCl dissociation. The deposits can also be reduced during etching of an aluminum layer by controlling the amount of fluorocarbon used in the main etch and adding BCl during the overetch. The cleaning step may be performed without a substrate in the chamber and may be followed by a conditioning step.

6773751, Aug 10, 2004

Mar 21, 2003

10/393010

Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA

Lam Research Corporation - Fremont CA

C23C 1634

42725538, 42725534, 4272557, 427576, 427455, 2041921

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

6776851, Aug 17, 2004

Jun 28, 2002

10/186917

Harmeet Singh - Berkeley CA
John E. Daugherty - Newark CA
Vahid Vahedi - Albany CA
Saurabh J. Ullal - Berkeley CA

Lam Research Corporation - Fremont CA

B08B 300

134 26, 134 11, 134 221, 134 31, 134902, 118715, 118723 R, 118723 EV, 438694, 438695, 438696, 438706, 438710, 438719, 438724, 438905, 427534, 427535, 427579

A method for removing chamber deposits in between process operations in a semiconductor process chamber is provided. The method initiates with depositing a fluorine containing polymer layer over an inner surface of a semiconductor process chamber where the semiconductor chamber is empty. Then, a wafer is introduced into the semiconductor process chamber after depositing the fluorine containing polymer layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the fluorine containing polymer layer covering the inner surface of the semiconductor process chamber. Then, the wafer is removed from the semiconductor process chamber. Next, an oxygen based cleaning operation is performed. The oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. An apparatus configured to remove chamber deposits between process operations is also provided.