John P Daugherty

6344105, Feb 5, 2002

Jun 30, 1999

09/345639

John E. Daugherty - Oakland CA
Neil Benjamin - Palo Alto CA
Jeff Bogart - Los Gatos CA
Vahid Vahedi - Albany CA
David Cooperberg - Fremont CA
Alan Miller - Moraga CA
Yoko Yamaguchi - Yokohama,

Lam Research Corporation - Fremont CA

H01L 2100

156345

Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

7311797, Dec 25, 2007

Jun 27, 2002

10/180504

Robert J. O'Donnell - Fremont CA,
John E. Daugherty - Newark CA,

Lam Research Corporation - Fremont CA

H01L 21/00
C23C 16/00

15634551, 15634552, 15634553, 118724, 118725, 118726, 20429801

Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.

2013014, Jun 13, 2013

Oct 12, 2012

13/650429

LAM RESEARCH CORPORATION - Fremont CA,
Cliff La Croix - Fremont CA,
Hong Shih - Fremont CA,
Allan Ronne - Fremont CA,
John Daugherty - Fremont CA,
Catherine Zhou - Fremont CA,

LAM RESEARCH CORPORATION - Fremont CA

B08B 9/032
B08B 3/02

134 2212, 134169 C

An injector cleaning apparatus with a concentric dual flow introducer and a flow-dispersing injector seat along with a method of cleaning an injector. The concentric dual flow introducer has concentric cleaning fluid flowpaths configured to communicate with a central passage and a plurality of peripheral passages of a gas injector. The input-side injector engaging interface of the concentric dual flow introducer and the flow-dispersing injector seat each have a compressible sealing portion having compressibility sufficient to yield under fluid cleaning surges attributable to initiation and termination of cleaning fluid flow through the injector cleaning apparatus along with resiliency sufficient to prevent abutment of the gas injector and a rigid facing portion of the input-side injector engaging interface and output-side injector engaging interface respectively.

2013010, May 2, 2013

May 30, 2012

13/483566

Armen Avoyan - Oakland CA,
Cliff La Croix - Livermore CA,
Hong Shih - Walnut CA,
John Daugherty - Fremont CA,

LAM RESEARCH CORPORATION - Fremont CA

B08B 3/00

134 941

In one embodiment, a cleaning assembly may include a modular electrode sealing housing, an acid injection inlet, and a fluid injection inlet. The modular electrode sealing housing may include a high pressure closure member that contains a first cleaning volume and a low pressure closure member that contains a second cleaning volume. The acid injection inlet can be in fluid communication with the first cleaning volume of the high pressure closure member. The fluid injection inlet can be in fluid communication with the second cleaning volume of the low pressure closure member. During normal operation, a showerhead electrode can be sealed within the modular electrode sealing housing such that the first cleaning volume is located on a first side and the second cleaning volume is located on a second side of the showerhead electrode.

2013010, May 2, 2013

May 30, 2012

13/483597

Armen Avoyan - Oakland CA,
Cliff La Croix - Livermore CA,
Hong Shih - Walnut CA,
John Daugherty - Fremont CA,

LAM RESEARCH CORPORATION - Fremont CA

B08B 9/00

134 2218, 134 953

In one embodiment, a method for cleaning a showerhead electrode my include sealing a showerhead electrode within a cleaning assembly such that a first cleaning volume is formed on a first side of the showerhead electrode and a second cleaning volume is formed on a second side of the showerhead electrode. An acidic solution can be loaded into the first cleaning volume on the first side of the showerhead electrode. The first cleaning volume on the first side of the showerhead electrode can be pressurized such that at least a portion of the acidic solution flows through one or more of the plurality of gas passages of the showerhead electrode. An amount of purified water can be propelled through the second cleaning volume on the second side of the showerhead electrode, and into contact with the second side of the showerhead electrode.

2009026, Oct 22, 2009

Apr 17, 2009

12/425639

HARMEET SINGH - Fremont CA,
John Daugherty - Fremont CA,
Vahid Vahedi - Oakland CA,
Hong Shih - Santa Clara CA,

Lam Research Corporation - Fremont CA

H01L 21/306
B44C 1/22
C23F 1/00

216 53, 428141, 1563451, 216108

Components entirely of ceramic with etched surfaces wherein the etched surface has a surface roughness value or at least about 100 microinches (about 2.54 microns) Ra, and methods of forming such.

2006000, Jan 5, 2006

Jun 30, 2004

10/882464

Miguel Saldana - Fremont CA,
Leonard Sharpless - Fremont CA,
John Daugherty - Newark CA,

C23F 1/00

156345270, 156345470

A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.

2005012, Jun 9, 2005

Oct 15, 2004

10/966750

John Daugherty - Newark CA,
Neil Benjamin - E. Palo Alto CA,
Song Huang - Fremont CA,

Lam Research Corporation - Fremont CA

H01L021/306
C23F001/00

156345290

A cylindrical pump baffle fitted to a semiconductor processing chamber is disclosed. The pump baffle contains a screen with bores therethrough to allow process gasses from the process chamber to be exhausted from the chamber at a reduced rate. This decreases process discrepancies to the wafer due to the prejudice of gas concentration as a result of the pressure differential imposed upon the gas and thereby the wafer brought about by the rapid and relatively unimpeded exit flow of process gasses when no restrictive member is in place. The pump baffle is also machined such that it does not block the placement and removal of wafers by the platform robot arm.