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John P Daugherty

from Discovery Bay, CA
Age ~53

John Daugherty Phones & Addresses

  • 5431 Gold Creek Cir, Byron, CA 94514
  • Discovery Bay, CA
  • Modesto, CA
  • Walnut Creek, CA
  • Orinda, CA
  • San Ramon, CA
  • Hinesville, GA
  • 5514 Arcadia Cir, Discovery Bay, CA 94505

Work

Position: Retired

Professional Records

Lawyers & Attorneys

John Daugherty Photo 1

John Michael Daugherty, Fairfield CA - Lawyer

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Address:
675 Texas St Ste 4500, Fairfield, CA 94533
(707) 784-6800 (Office)
Solano County DA'S Office
675 Texas St Ste 4500, Fairfield, CA 94533
(707) 784-6800 (Office)
Licenses:
California - Active 1985
Florida - Member in Good Standing 1995
Education:
University of North Carolina School of Law
Lewis & Clark Law School
Degree - JD - Juris Doctor - Law
John Daugherty Photo 2

John Lee Daugherty - Lawyer

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Licenses:
Virginia - Authorized to practice law 1988
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John Daugherty, Fairfield CA - Lawyer

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Office:
675 Texas St Ste 4500, Fairfield, CA
ISLN:
908012174
Admitted:
1990
University:
Georgetown University, B.S.
Law School:
Stanford University, J.D.
John Daugherty Photo 4

John Daugherty, Fairfield CA - Lawyer

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Office:
600 Union Ave., Fairfield, CA
Specialties:
Criminal Law(75%)
Civil Practice(25%)
ISLN:
910383323
Admitted:
1985
University:
University of North Carolina at Chapel Hill, B.S.
Law School:
Northwestern School of Law, J.D.
John Daugherty Photo 5

John Daugherty, Fairfield CA - Lawyer

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Address:
675 Texas St, Fairfield, CA 94533
Phone:
(707) 784-6800 (Phone), (707) 784-7986 (Fax)
Experience:
38 years
Jurisdiction:
California (1985)
Law School:
Lewis & Clark Coll Northwestern School of Law
Education:
Univ of North Carolina, Undergraduate Degree
Lewis & Clark Coll Northwestern School of Law, Law Degree
Memberships:
California State Bar (1985)

Medicine Doctors

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John F. Daugherty

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Specialties:
Family Medicine, Urgent Care Medicine
Work:
LewisGale PhysiciansLewis Gale Valley View Urgent Care & Family Practice
4910 Vly Vw Blvd NW STE 106, Roanoke, VA 24012
(540) 265-1607 (phone), (540) 366-7353 (fax)
Education:
Medical School
Rosalind Franklin University/ Chicago Medical School
Graduated: 1977
Procedures:
Allergen Immunotherapy
Arthrocentesis
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Skin Tags Removal
Vaccine Administration
Conditions:
Acute Bronchitis
Acute Pharyngitis
Acute Sinusitis
Acute Upper Respiratory Tract Infections
Allergic Rhinitis
Languages:
English
Spanish
Description:
Dr. Daugherty graduated from the Rosalind Franklin University/ Chicago Medical School in 1977. He works in Roanoke, VA and specializes in Family Medicine and Urgent Care Medicine. Dr. Daugherty is affiliated with Lewis Gale Medical Center.
John Daugherty Photo 7

John T. Daugherty

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Specialties:
Family Medicine, Obstetrics & Gynecology
Work:
Covenant Medical Group IncMcneeley Family Physicians
110 Executive Park Dr, Clinton, TN 37716
(865) 494-9241 (phone), (865) 494-0895 (fax)
Education:
Medical School
University of Tennessee College of Medicine at Memphis
Graduated: 1988
Procedures:
Allergen Immunotherapy
Arthrocentesis
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Hearing Evaluation
Skin Tags Removal
Vaccine Administration
Conditions:
Acute Bronchitis
Acute Sinusitis
Acute Upper Respiratory Tract Infections
Skin and Subcutaneous Infections
Abdominal Hernia
Languages:
English
Description:
Dr. Daugherty graduated from the University of Tennessee College of Medicine at Memphis in 1988. He works in Clinton, TN and specializes in Family Medicine and Obstetrics & Gynecology.
John Daugherty Photo 8

John L. Daugherty

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Specialties:
Family Medicine
Work:
Daugherty Medical Clinic
1409 Braden St, Jacksonville, AR 72076
(501) 982-0576 (phone), (501) 982-0041 (fax)
Education:
Medical School
University of Arkansas College of Medicine at Little Rock
Graduated: 1978
Procedures:
Arthrocentesis
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Vaccine Administration
Conditions:
Acute Pharyngitis
Allergic Rhinitis
Anemia
Anxiety Phobic Disorders
Attention Deficit Disorder (ADD)
Languages:
English
Description:
Dr. Daugherty graduated from the University of Arkansas College of Medicine at Little Rock in 1978. He works in Jacksonville, AR and specializes in Family Medicine. Dr. Daugherty is affiliated with North Metro Medical Center.
John Daugherty Photo 9

John Lewis Daugherty

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Specialties:
Family Medicine
General Practice
Education:
University of Arkansas(1978)

Resumes

Resumes

John Daugherty Photo 10

John Daugherty

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Location:
United States
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John Daugherty

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Location:
United States
John Daugherty Photo 12

John Daugherty

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Location:
United States
John Daugherty Photo 13

John Daugherty

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Location:
United States
John Daugherty Photo 14

John Daugherty

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Location:
United States

Business Records

Name / Title
Company / Classification
Phones & Addresses
John A. Daugherty
Director
Target Hunger
John Daugherty
Vice President
Services Incorporated
John Daugherty
Chief Information Officer
Montana Dept of Justice
Legal Counsel/Prosecution · Legal Services · Crime Control · Information System Services · Computer Operations · Indentificatin Bureau · Regulation/Administrative Transportation · Records & Driver Control Services
(406) 777-4388, (406) 444-3604, (406) 444-2947, (406) 444-3651
John A Daugherty
D & D, LLC
BUY/SELL/DEAL IN OR WITH REAL ESTATE
John L. Daugherty
JOHN L. DAUGHERTY, D.D.S., LLC
John Daugherty
DAUGHERTYS SERVICES, LC
John M. Daugherty
President
SOLANO COUNTY BUILDING CORPORATION
Public Finance/Taxation/Monetary Policy · Trade Contractor
675 Texas St STE 2500, Fairfield, CA 94533
John D. Daugherty
Director
D. & D. PRODUCTS, INC

Publications

Us Patents

Techniques For Improving Etch Rate Uniformity

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US Patent:
6344105, Feb 5, 2002
Filed:
Jun 30, 1999
Appl. No.:
09/345639
Inventors:
John E. Daugherty - Oakland CA
Neil Benjamin - Palo Alto CA
Jeff Bogart - Los Gatos CA
Vahid Vahedi - Albany CA
David Cooperberg - Fremont CA
Alan Miller - Moraga CA
Yoko Yamaguchi - Yokohama, JP
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 2100
US Classification:
156345
Abstract:
Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Carbonitride Coated Component Of Semiconductor Processing Equipment And Method Of Manufacturing Thereof

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US Patent:
6533910, Mar 18, 2003
Filed:
Dec 29, 2000
Appl. No.:
09/750251
Inventors:
Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 1434
US Classification:
20429831, 156345, 20429801
Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a carbonitride containing surface and process for manufacture thereof.

Diamond Coatings On Reactor Wall And Method Of Manufacturing Thereof

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US Patent:
6537429, Mar 25, 2003
Filed:
Dec 29, 2000
Appl. No.:
09/749925
Inventors:
Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 1400
US Classification:
204193, 2041921, 20419211, 20419215, 20419225, 20419637, 20429801, 427577, 428332, 428408, 428698, 428704
Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

Boron Nitride/Yttria Composite Components Of Semiconductor Processing Equipment And Method Of Manufacturing Thereof

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US Patent:
6613442, Sep 2, 2003
Filed:
Dec 29, 2000
Appl. No.:
09/749924
Inventors:
Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B23B 1504
US Classification:
428469, 428704, 428697
Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

Zirconia Toughened Ceramic Components And Coatings In Semiconductor Processing Equipment And Method Of Manufacture Thereof

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US Patent:
6620520, Sep 16, 2003
Filed:
Dec 29, 2000
Appl. No.:
09/750056
Inventors:
Robert J. ODonnell - Alameda CA
Christopher C. Chang - Sunnyvale CA
John E. Daugherty - Alameda CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B32B 1504
US Classification:
428469, 438 9, 118715
Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al O ). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Method Of Reducing Aluminum Fluoride Deposits In Plasma Etch Reactor

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US Patent:
6770214, Aug 3, 2004
Filed:
Mar 30, 2001
Appl. No.:
09/820691
Inventors:
Duane Outka - Fremont CA
Yousun Kim - Santa Clara CA
Anthony Chen - Oakland CA
John Daugherty - Fremont CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C25F 304
US Classification:
216 67, 216 77, 134 11, 134 221
Abstract:
A method of reducing aluminum fluoride deposits in a plasma etch reactor. The deposits can be reduced during a cleaning step wherein the cleaning gas includes BCl energized into a plasma such that dissociated and undissociated BCl are formed and the undissociated BCl reacts with aluminum fluoride deposits and forms volatile products which are removed from the chamber. The introduction of Cl into the cleaning gas allows control of the degree of BCl dissociation. The deposits can also be reduced during etching of an aluminum layer by controlling the amount of fluorocarbon used in the main etch and adding BCl during the overetch. The cleaning step may be performed without a substrate in the chamber and may be followed by a conditioning step.

Boron Nitride/Yttria Composite Components Of Semiconductor Processing Equipment And Method Of Manufacturing Thereof

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US Patent:
6773751, Aug 10, 2004
Filed:
Mar 21, 2003
Appl. No.:
10/393010
Inventors:
Robert J. ODonnell - Alameda CA
John E. Daugherty - Alameda CA
Christopher C. Chang - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C 1634
US Classification:
42725538, 42725534, 4272557, 427576, 427455, 2041921
Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a boron nitride/yttria composite containing surface and process for manufacture thereof.

In-Situ Cleaning Of A Polymer Coated Plasma Processing Chamber

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US Patent:
6776851, Aug 17, 2004
Filed:
Jun 28, 2002
Appl. No.:
10/186917
Inventors:
Harmeet Singh - Berkeley CA
John E. Daugherty - Newark CA
Vahid Vahedi - Albany CA
Saurabh J. Ullal - Berkeley CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 300
US Classification:
134 26, 134 11, 134 221, 134 31, 134902, 118715, 118723 R, 118723 EV, 438694, 438695, 438696, 438706, 438710, 438719, 438724, 438905, 427534, 427535, 427579
Abstract:
A method for removing chamber deposits in between process operations in a semiconductor process chamber is provided. The method initiates with depositing a fluorine containing polymer layer over an inner surface of a semiconductor process chamber where the semiconductor chamber is empty. Then, a wafer is introduced into the semiconductor process chamber after depositing the fluorine containing polymer layer. Next, a process operation is performed on the wafer. The process operation deposits a residue on the fluorine containing polymer layer covering the inner surface of the semiconductor process chamber. Then, the wafer is removed from the semiconductor process chamber. Next, an oxygen based cleaning operation is performed. The oxygen based cleaning operation liberates fluorine from the fluorine containing polymer layer to remove a silicon based residue. An apparatus configured to remove chamber deposits between process operations is also provided.
John P Daugherty from Discovery Bay, CA, age ~53 Get Report