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Julio Aranovich

from San Francisco, CA
Age ~74

Julio Aranovich Phones & Addresses

  • 3931 Clay St, San Francisco, CA 94118 (415) 751-0140
  • Napa, CA
  • Los Angeles, CA
  • 1329 Waverley St, Palo Alto, CA 94301 (650) 322-9991
  • Hanover, NH
  • Santa Clara, CA
  • 3931 Clay St, San Francisco, CA 94118 (925) 777-0703

Work

Company: Auka Jul 2015 Position: Managing partner

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Stanford University 1975 to 1981

Skills

Strategy • Semiconductor Industry • Project Management • Engineering Management • Manufacturing • Product Development • Lean Manufacturing • Product Marketing • Silicon • Thin Films • Cross Functional Team Leadership • Business Development • Management • Leadership • Strategic Planning • Supply Chain Management • Product Management • Leadership Development • Start Ups • Matlab • General Management • Peacebuilding

Industries

Management Consulting

Resumes

Resumes

Julio Aranovich Photo 1

Managing Partner

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Location:
Berkeley, CA
Industry:
Management Consulting
Work:
Auka
Managing Partner

La Voz Pãºblica Foundation
Founder

Res Verba
Founder

Adc 2003 - 2007
Founder

Narrative Transformation 2003 - 2007
Partner and Founder
Education:
Stanford University 1975 - 1981
Doctorates, Doctor of Philosophy
Skills:
Strategy
Semiconductor Industry
Project Management
Engineering Management
Manufacturing
Product Development
Lean Manufacturing
Product Marketing
Silicon
Thin Films
Cross Functional Team Leadership
Business Development
Management
Leadership
Strategic Planning
Supply Chain Management
Product Management
Leadership Development
Start Ups
Matlab
General Management
Peacebuilding

Publications

Us Patents

Integrated Circuit Structure Having Contact Openings And Vias Filled By Self-Extrusion Of Overlying Metal Layer

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US Patent:
58474617, Dec 8, 1998
Filed:
Jun 17, 1996
Appl. No.:
8/664717
Inventors:
Zheng Xu - Foster City CA
Hoa Kieu - Sunnyvale CA
Julio Aranovich - Palo Alto CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2348
H01L 2352
H01L 2940
US Classification:
257751
Abstract:
A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i. e. , by planarization.

Semiconductor Processing System With A Thermoelectric Cooling/Heating Device

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US Patent:
59963530, Dec 7, 1999
Filed:
May 21, 1998
Appl. No.:
9/082845
Inventors:
Kenneth Maxwell - Austin TX
Julio Aranovich - Palo Alto CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
F24B 2102
US Classification:
62 32
Abstract:
The invention provides an apparatus for controlling a temperature of a component of a processing system comprising one or more thermoelectric devices disposed in thermal conduction with the component and a thermal fluid passage disposed in thermal conduction with the thermoelectric device. To regulate the temperature of the component, the thermoelectric device is connected to an electrical power, and a thermally conductive fluid is flowed through the thermal passage. The invention further provides an apparatus for removing particles comprising one or more thermoelectric devices disposed on a gas exhaust line. To remove particles from a processing system, the thermoelectric devices are connected to an electrical power source to create a cold trap within the gas exhaust on which particles condense.

Method Of Filling Of Contact Openings And Vias By Self-Extrusion Of Overlying Compressively Stressed Matal Layer

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US Patent:
56680554, Sep 16, 1997
Filed:
May 5, 1995
Appl. No.:
8/435774
Inventors:
Zheng Xu - Foster City CA
Hoa Kieu - Sunnyvale CA
Julio Aranovich - Palo Alto CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2144
US Classification:
438637
Abstract:
A process and resulting structure are described for using a metal layer formed over an insulating layer as both the filler material to fill openings in the insulating layer and as the patterned metal interconnect or wiring harness on the surface of the insulating layer. The process includes the steps of forming a compressively stressed metal layer over an insulating layer having previously formed openings therethrough to the material under the insulating layer; forming a high tensile strength cap layer of material over the compressively stressed metal layer; and then heating the structure to a temperature sufficient to cause the compressively stressed metal layer to extrude down into the openings in the underlying insulating layer. The overlying cap layer has sufficient tensile strength to prevent or inhibit the compressive stressed metal layer from extruding upwardly to form hillocks which would need to be removed, i. e. , by planarization.

Shield And Collimator Pasting Deposition Chamber With A Side Pocket For Pasting The Bottom Of The Collimator

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US Patent:
53823397, Jan 17, 1995
Filed:
Sep 17, 1993
Appl. No.:
8/123420
Inventors:
Julio A. Aranovich - Palo Alto CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1434
C23C 1435
US Classification:
20419212
Abstract:
A deposition chamber used in the physical vapor deposition of wafers has a side pocket for pasting the bottom of a collimator. To prolong the useful life of a collimator it is rotated into the side pocket and the bottom is pasted with a pasting material which is resistant to cracking and flaking. A series of wafers are cycled through the deposition chamber. While each wafer is in the deposition chamber a deposition material is sputtered onto its surface. After a predetermined number of wafers are sputtered in the deposition chamber a pasting cycle is run. During the pasting cycle, a pasting material is sputtered over the deposition chamber and the top of the collimator. The collimator is then moved into the side pocket of the deposition chamber and a pasting material is sputtered from a second target over the bottom of the collimator. The pasting material serves to resist cracking and flaking of the deposition material and thus prolongs the useful life of the shields in the deposition chamber and the collimator.
Julio Aranovich from San Francisco, CA, age ~74 Get Report