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Romany Ghali Phones & Addresses

  • Monroe, NY
  • Harriman, NY
  • Linden, NJ
  • Elizabeth, NJ

Publications

Us Patents

Polycrystalline Silicon Layer With Nano-Grain Structure And Method Of Manufacture

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US Patent:
20050158924, Jul 21, 2005
Filed:
Jan 20, 2004
Appl. No.:
10/707878
Inventors:
Ashima Chakravarti - Hopewell Junction NY,
Bruce Doris - Brewster NY,
Romany Ghali - Linden NJ,
Oleg Gluschenkov - Poughkeepsie NY,
Michael Gribelyuk - Stamford CT,
Woo-Hyeong Lee - Poughquag NY,
Anita Madan - Danbury CT,
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY
International Classification:
H01L021/00
US Classification:
438151000
Abstract:
A method of forming polycrystalline silicon with ultra-small grain sizes employs a differential heating of the upper and lower sides of the substrate of a CVD apparatus, in which the lower side of the substrate receives considerably more power than the upper side, preferable more than 75% of the power; and in which the substrate is maintained during deposition at a temperature more than 50° C. above the 550° C. crystallization temperature of silicon.
Romany B Ghali from Monroe, NY, age ~48 Get Report