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Tuqiang Ni

from Fremont, CA
Age ~57

Tuqiang Ni Phones & Addresses

  • 5415 Ontario Cmn, Fremont, CA 94555 (510) 797-6241
  • 653 Crystal Ct, Pleasanton, CA 94566
  • San Joaquin, CA
  • Alameda, CA
  • Dallas, TX
  • State College, PA
  • Tracy, CA
  • Brentwood, CA

Work

Position: Building and Grounds Cleaning and Maintenance Occupations

Education

Degree: Graduate or professional degree

Publications

Us Patents

Method Of An Apparatus For Obtaining Neutral Dissociated Gas Atoms

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US Patent:
6388383, May 14, 2002
Filed:
Mar 31, 2000
Appl. No.:
09/539905
Inventors:
Tuqiang Ni - Fremont CA
Wenli Collison - Fremont CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H05B 3126
US Classification:
31511181, 156345, 118723 IR
Abstract:
A downstream stripper includes a source of dissociated electrically neutral gas atoms derived by a plasma generator responsive to gas molecules including the atoms. The plasma generator includes a chamber responsive to RF electromagnetic fields derived by two coils on opposed sides of the chamber. The coils supply the fields to the interior of the chamber via windows on the opposed sides. The chamber includes metal, electrically grounded walls and an outlet with such walls for attracting charge particles in the plasma. The interiors of the outlet and chamber walls are lined with quartz for capturing the charge particles. The electrically neutral gas atoms have a high concentration and a very low percentage of electrically charged particles flowing with them.

Inductively Coupled Plasma Downstream Strip Module

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US Patent:
2004014, Aug 5, 2004
Filed:
Dec 18, 2003
Appl. No.:
10/740717
Inventors:
Wenli Collison - Fremont CA,
Michael Barnes - San Francisco CA,
Tuqiang Ni - Fremont CA,
Butch Berney - Pleasanton CA,
Wayne Vereb - Pleasanton CA,
Brian McMillin - Fremont CA,
Assignee:
Lam Research Corporation
International Classification:
H01L021/306
US Classification:
118/7230IR, 156/345350
Abstract:
A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate. A chamber interconnecting port interconnects the plasma containment chamber and the secondary chamber. The chamber interconnecting port allows gases from the plasma containment chamber to flow into the secondary chamber during the processing of the substrate. The chamber interconnecting port is positioned between the plasma containment chamber and the secondary chamber such that, when the substrate is positioned on the chuck in the secondary chamber, there is no substantial direct line-of-sight exposure of the substrate to the primary dissociation zone of the plasma formed within the plasma containment chamber.

Plasma Processing Method And Apparatus With Control Of Plasma Excitation Power

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US Patent:
8480913, Jul 9, 2013
Filed:
Jun 30, 2011
Appl. No.:
13/172917
Inventors:
Tuqiang Ni - Pleasanton CA,
Weinan Jiang - San Jose CA,
Frank Y. Lin - Fremont CA,
Chung-Ho Huang - Fremont CA,
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23F 1/00
C23F 1/08
US Classification:
216 67, 15634528
Abstract:
The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e. g. , at an intersection of a trench wall and base.

System And Method For Controlling Plasma With An Adjustable Coupling To Ground Circuit

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US Patent:
8518211, Aug 27, 2013
Filed:
Nov 16, 2005
Appl. No.:
11/282106
Inventors:
Tuqiang Ni - Fremont CA,
Wenli Collison - Fremont CA,
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/3065
C23C 16/00
US Classification:
15634544, 15634547, 118723 E
Abstract:
A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Silicon Carbide Gas Distribution Plate And Rf Electrode For Plasma Etch Chamber

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US Patent:
7992518, Aug 9, 2011
Filed:
Mar 21, 2007
Appl. No.:
11/689318
Inventors:
Robert Wu - San Diego CA,
Tuqiang Ni - Pleasanton CA,
Assignee:
Advanced Micro-Fabrication Equipment, Inc. Asia - Georgetown, Grand Cayman
International Classification:
C23C 16/50
C23F 1/00
H01L 21/306
US Classification:
118723E, 15634533, 15634534, 15634543, 15634545
Abstract:
A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber.

Plasma Processing Method And Apparatus With Control Of Plasma Excitation Power

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US Patent:
2002013, Oct 3, 2002
Filed:
Mar 30, 2001
Appl. No.:
09/821753
Inventors:
Tuqiang Ni - Fremont CA,
Frank Lin - Fremont CA,
Chung-Ho Huang - Fremont CA,
Weinan Jiang - San Jose CA,
Assignee:
Lam Research Corporation
International Classification:
B44C001/22
C23F001/00
C23C016/503
US Classification:
156/345440, 216/067000, 118/72300E
Abstract:
The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

System And Method For Controlling Plasma With An Adjustable Coupling To Ground Circuit

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US Patent:
2004011, Jun 24, 2004
Filed:
Dec 20, 2002
Appl. No.:
10/326918
Inventors:
Tuqiang Ni - Fremont CA,
Wenli Collison - Fremont CA,
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23C016/00
US Classification:
118/72300E
Abstract:
A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.

Moveable Barrier For Multiple Etch Processes

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US Patent:
2004014, Jul 29, 2004
Filed:
Jan 14, 2004
Appl. No.:
10/758629
Inventors:
Tuqiang Ni - Fremont CA,
Kenji Takeshita - Fremont CA,
Brian McMillin - Fremont CA,
Assignee:
Lam Research Corporation
International Classification:
H01L021/306
US Classification:
156/345510
Abstract:
A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.
Tuqiang Ni from Fremont, CA, age ~57 Get Report